Español Samsung 8Gb DDR4 2666Mhz UDIMM 1.2V ECC
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Samsung 8Gb DDR4 2666Mhz UDIMM 1.2V ECC
- Memory layout: 1 x 8Gb.
- Memory Clock Speed: 2666 MHz.
- Internal memory type: DDR4.
- ECC: Yes.
- Memory voltage: 1.2 V.
P/N: M391A1K43BB2-CTD - EAN/UPC: 7640143873005
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54,67 € With VAT
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SAMSUNG 8GB DDR4-2666 UDIMM ECC Unbuffered CL19.
HIghlights....
* Memory design: 1 x 8Gb.
* Memory clock speed: 2666 MHz.
* Internal memory type: DDR4.
* ECC: Yes.
* Memory voltage: 1.2 V.
| Latencia CAS | 17 |
| Memoria interna | 8 GB |
| Diseño de memoria (módulos x tamaño) | 1 x 8 GB |
| Tipo de memoria interna | DDR4 |
| Velocidad de memoria del reloj | 2666 MHz |
| Componente para | PC/server |
| Forma de factor de memoria | UDIMM |
| Tipo de memoria con búfer | Unregistered (unbuffered) |
| ECC | Si |
| Clasificación de memoria | 1 |
| Voltaje de memoria | 1.2 |
SAMSUNG 8GB DDR4-2666 UDIMM ECC Unbuffered CL19.
HIghlights....
* Memory design: 1 x 8Gb.
* Memory clock speed: 2666 MHz.
* Internal memory type: DDR4.
* ECC: Yes.
* Memory voltage: 1.2 V.
| Latencia CAS | 17 |
| Memoria interna | 8 GB |
| Diseño de memoria (módulos x tamaño) | 1 x 8 GB |
| Tipo de memoria interna | DDR4 |
| Velocidad de memoria del reloj | 2666 MHz |
| Componente para | PC/server |
| Forma de factor de memoria | UDIMM |
| Tipo de memoria con búfer | Unregistered (unbuffered) |
| ECC | Si |
| Clasificación de memoria | 1 |
| Voltaje de memoria | 1.2 |
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